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Extra info for Advanced Metallization & Interconnect Systems for Ulsi Applications in 1996: Materials Research Society Conference Proceedings
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The finding is a direct result of the good thermal stability of Ag(Al) thin films on the SiO2 layer. The thermal stability of Ag thin films on SiO2 substrates is enhanced by the addition of aluminum atoms to pure silver . Though the bulk resistivity of Ag is the lowest at room temperature, agglomeration of silver thin films at higher temperatures has been considered as one of the obstacles for its use as the interconnect material of electronic devices. The Ag(Al)II thin films investigated in this study have comparable resistivity value with pure Ag thin film at room temperature and maintained lower resistivity than Ag thin film from 400°C without any diffusion barrier on SiO2.