Advanced Metallization & Interconnect Systems for Ulsi by Robert Havemann, John Schmitz, Hiroshi Komiyama, Kazuo

By Robert Havemann, John Schmitz, Hiroshi Komiyama, Kazuo Tsubouchi

The MRS Symposium continuing sequence is an across the world known reference appropriate for researchers and practitioners.

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Marecal, E. Quesnel, and Y. Pauleau, J. Electrochem. , 141 (6), 1693(1994). T. Iijima, H. Ono, N. Ninomiya, Y. Ushiku, T. Hatanaka, A. Nishiyama and H. Iwai, Extended Abstracts Conf. On Solid State Devices and Materials, Makuhari, 1993. D. Adams, B. A. Julies, J. W. Mayer and T. L. Alford. Thin Solid Films 332, 235(1998). A. W. Czandema, J. Phys. Chem. 68, 2765(1964). T. E. Graedel, J. P. Franey, G. J. Gualltieri, G. W. Kammlott, D. L. Malm, Corros. Sci. 25, 1163(1985). T. L. Alford, J. Li, S. Q.

D. Adams, G. F. Malgas, N. D. Theodore, R. Gregory, H. C. Kim, E. Misra, T. L. Alford, J. W. Mayer. J. Vac. Sci. Technol. B 22(5), 2345(2004). S. P. Murarka, R. J. Gutman, A. E. Kaloyeros and W. A. Lanford, Thin Solid Films, 236, 257(1993). H. Miyazaki, K. Hinode, Y. Homma and K. Mukai, Jpn. J. Appl. , 48, 329(1987). T. L. Alford, D. Adams, T. Laursen and B. M. Ullrich, Appl. Phys. , 68, 3251(1996). D. Adams, T. Laursen, T. L. Alford, and J. W. Mayer. Thin Solid Films 308–309, 448(1997). N. Marecal, E.

The finding is a direct result of the good thermal stability of Ag(Al) thin films on the SiO2 layer. The thermal stability of Ag thin films on SiO2 substrates is enhanced by the addition of aluminum atoms to pure silver [6]. Though the bulk resistivity of Ag is the lowest at room temperature, agglomeration of silver thin films at higher temperatures has been considered as one of the obstacles for its use as the interconnect material of electronic devices. The Ag(Al)II thin films investigated in this study have comparable resistivity value with pure Ag thin film at room temperature and maintained lower resistivity than Ag thin film from 400°C without any diffusion barrier on SiO2.

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